S. Okamoto et E. Nakazawa, TRANSIENT EMISSION MECHANISMS IN THIN-FILM ELECTROLUMINESCENT DEVICESWITH RARE-EARTH-ION-ACTIVATED SRS PHOSPHOR LAYERS, JPN J A P 1, 34(2A), 1995, pp. 521-526
Transient emission processes in rare-earth-ion-activated SrS thin-film
electroluminescent (TFEL) devices have been investigated by measuring
emitted light waveforms. The rare-earth-ion activators are Ce3+, Pr3, Nd3+, Eu3+, Sm3+, Tb3+, Dy3+, Er3+, Ho3+ and Tm3-. The waveforms can
be classified into three groups according to ;light emission responsi
bility (LER) to applied voltage pulse. In Group 1, Tb and Dy with slow
LER show abrupt decay at the trailing edge of each driving voltage pu
lse. This is due to the Auger process with strong interaction of the e
xcited ions with electrons flowing backward in the SrS conduction band
. In Group 2, Ce, Pr, Nd, and Eu with fast LER cause secondary emissio
n at the edge. In Group 3, other; ions show slower LER than in Group 2
, in particular, Er decay curves indicate a single luminous center.