ANALYSIS OF SEMIINSULATING GAAS AND THE ROLE OF POSITRON-ANNIHILATION

Authors
BROZEL MR
Citation
Mr. Brozel, ANALYSIS OF SEMIINSULATING GAAS AND THE ROLE OF POSITRON-ANNIHILATION, Applied physics A: Materials science & processing, 60(6), 1995, pp. 537-540
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
60
Issue
6
Year of publication
1995
Pages
537 - 540
Database
ISI
SICI code
0947-8396(1995)60:6<537:AOSGAT>2.0.ZU;2-8
Abstract
The uses of Positron Annihilation (PA) techniques for the analysis of native defects in bulk GaAs are reported. PA has allowed the structure of the metastable state of the important EL2 defect to be examined an d has demonstrated that a vacancy is present in the complex. PA has al so provided strong evidence that the centre responsible for minority-c arrier lifetime degradation in this material is the arsenic vacancy.