A COMBINED APPROACH - ISOTOPIC EXPOSURE SIMS ANALYSIS SEM TO STUDY THE EARLY STAGES OF OXIDATION OF BETA-NIAL AT 1473 K

Citation
J. Jedlinski et al., A COMBINED APPROACH - ISOTOPIC EXPOSURE SIMS ANALYSIS SEM TO STUDY THE EARLY STAGES OF OXIDATION OF BETA-NIAL AT 1473 K, Werkstoffe und Korrosion, 46(5), 1995, pp. 297-305
Citations number
29
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science
Journal title
ISSN journal
00432822
Volume
46
Issue
5
Year of publication
1995
Pages
297 - 305
Database
ISI
SICI code
0043-2822(1995)46:5<297:ACA-IE>2.0.ZU;2-M
Abstract
The early oxidation stages of unmodified and yttrium-implanted beta-Ni Al have been studied at 1473 K using sequential isotopic exposure (so- called two-stage oxidation) combined with low and high resolution SIMS analysis and SEM characterization. The scales growing on unmodified m aterial comprised typically a cracked morphology with oxide ridges gro wing outward from the cracks. Some ridges were formed at the reaction temperature during the first oxidation stage and continued growing dur ing the second stage. This resulted in a network of ridges on the oute r surface of the scale. Two regions : non-cracked areas and cracked ro und patches were observed in the scale on yttrium-implanted beta-NiAl. No ridges but thin lace-like oxide was formed in cracks and round par ticles extruded from some crack centres. No network was formed by the lace-like oxide. Inward oxygen transport contributed significantly to the overall matter transport in the patches, while its contribution in the remaining scale was much less pronounced. The very thin outermost layer of most patches was enriched in Cr, which was present at a leve l of ca. 90 ppm only in the starting material. This finding is discuss ed in terms of the effect of Cr on the phase transformation of unstabl e aluminas into the stable alpha-Al2O3. The results showed that the sc ales were inhomogeneous regarding both composition and microstructure. Therefore, only analytical methods having respectable sensitivity and resolution might be used to give reliable information regarding the g rowth mechanisms of scales. This applies to SIMS as well as to the ele ctron microscopy methods.