RESONANT-TUNNELING THROUGH A SINGLE IMPURITY IN HIGH MAGNETIC-FIELDS - PROBING A 2-DIMENSIONAL ELECTRON-GAS ON A NANOMETER-SCALE

Citation
Pj. Mcdonnell et al., RESONANT-TUNNELING THROUGH A SINGLE IMPURITY IN HIGH MAGNETIC-FIELDS - PROBING A 2-DIMENSIONAL ELECTRON-GAS ON A NANOMETER-SCALE, Physica. B, Condensed matter, 211(1-4), 1995, pp. 433-436
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
211
Issue
1-4
Year of publication
1995
Pages
433 - 436
Database
ISI
SICI code
0921-4526(1995)211:1-4<433:RTASII>2.0.ZU;2-Y
Abstract
Tunnelling through highly localised impurity states in the quantum wel l of a resonant tunnelling diode allows us to study the properties of the two-dimensional electron gas formed at the emitter barrier of the device. In high magnetic fields, the electrons form quantum dots in th e disordered potential due to the unscreened donors in the depleted co llector contact.