We have measured Raman resonance profiles in GaAs/AlAs multiple quantu
m wells under magnetic fields up to 20 T for both (100) and (111) crys
tal orientations. The results are interpreted as double Raman resonanc
es involving magneto-excitons as intermediate states in the scattering
process. A theoretical model including excitonic effects reproduces r
emarkably well the main features of the observed double Raman resonanc
es. Our work clarifies the essential role of excitons in the resonant
behavior of the Raman cross-section in low-dimensional semiconductors.