Afw. Vandestadt et al., DIAMAGNETIC SDH EFFECT IN CROSSED AND PARALLEL CURRENT MAGNETIC-FIELDDIRECTIONS IN SI-DELTA-DOPED GAAS, Physica. B, Condensed matter, 211(1-4), 1995, pp. 458-461
We have performed magnetoresistance measurements on Si-delta-doped GaA
s in parallel pulsed magnetic fields up to 50 T. A systematic study ha
s been made in order to understand the influence of the direction betw
een the in-plane magnetic field and the sample current on the magnetor
esistance. The parallel held magnetoresistance traces of thin Si-delta
-doped GaAs layers ( < 20 Angstrom) show a distinct difference in the
depopulation of the n = 1 subband when the magnetic field is either pa
rallel or perpendicular to the sample current. For this subband, the m
agnetic field values at depopulation deviate significantly from the un
iversal depopulation curves calculated by Reisinger and Koch.