ELECTRON-MOBILITY IN SI DELTA-DOPED GAAS

Authors
KOENRAAD PM VANDESTADT AFW SHI JM HAI GQ STUDART N VANSANT P PEETERS FM DEVREESE JT PERENBOOM JAAJ WOLTER JH
Citation
Pm. Koenraad et al., ELECTRON-MOBILITY IN SI DELTA-DOPED GAAS, Physica. B, Condensed matter, 211(1-4), 1995, pp. 462-465
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
211
Issue
1-4
Year of publication
1995
Pages
462 - 465
Database
ISI
SICI code
0921-4526(1995)211:1-4<462:EISDG>2.0.ZU;2-Q
Abstract
We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instea d of the full charge distribution itself.