TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE DIAMOND FETS - MODELING AND EXPERIMENT

For the first time, a theoretical model for polycrystalline diamond (P CD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the v erification of material parameters employed in the simulation. The mod el runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentod e-like to triode-like behaviour as well as the temperature dependent p inch-off and saturation. Agreement between simulated and measured curr ents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.