PYROELECTRIC PROPERTIES OF LA-MODIFIED AND MG-MODIFIED PBTIO3 THIN-FILMS

The pyroelectric properties of highly c-axis-oriented lanthanum- and m agnesium-modified PbTiO3 (PLMT, (1-x) . Pb0.9La0.1Ti0.975O3 + xMgO) th in films were investigated by measuring of static pyroelectric propert ies. The figures of merit F.M. for voltage responsivity of pyroelectri c IR sensors were considerably higher in the region of x=0.005-0.010 t han in other regions; in particular, the sample with x=0.010 showed th e highest F.M. of around 1.05 x 10(-10) C . cm/J, 1.5 times as large a s that of the PL10 (PLMT; x=0) sample. Judging from the measurement of pyroelectric properties of the films, thin films with the composition of x=0.010 show great promise as element materials far pyroelectric I R sensors.