MEASUREMENTS OF THE BREAKDOWN VOLTAGE OF THE LATERAL INSULATED GATE BIPOLAR-TRANSISTOR ON THE SILICON-ON-INSULATOR FILM WITH VARYING IMPLANTATION DOSES FOR THE N-BUFFER LAYER

The blocking capability of the lateral insulated gate bipolar transist or (LIGBT) fabricated on the silicon-on-insulator (SOI) him is investi gated experimentally with varying implantation doses for the n-buffer layer. This note shows the experimental results on the breakdown volta ge at room temperature and 125 degrees C. The blocking capability of t he LIGBT on the SOI film depends strongly on the implantation dose for the n-buffer layer.