PREPARATION OF CO FERRITE FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Citation
E. Fujii et al., PREPARATION OF CO FERRITE FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(1), 1995, pp. 130-131
Citations number
7
Categorie Soggetti
Physics, Applied
Volume
34
Issue
1
Year of publication
1995
Pages
130 - 131
Database
ISI
SICI code
Abstract
Thin films of Co ferrite and Co-Zn ferrite (Co1-xZnxFe2O4, 0 less than or equal to 0.5) with partial preferential orientation of the (100) p lane parallel to the film surface were prepared on soda-lime glass sub strates at 400 degrees C by plasma-enhanced metalorganic chemical vapo r deposition. Faraday rotation of the CoFe2O4 film took the negative m aximum value of -2.8 x 10(4) deg/cm near 700 nm in the wavelength rang e from 550 nm to 1100 nm. The Faraday hysteresis loop indicated that t he CoFe2O4 film had perpendicular magnetic anisotropy, which was cause d mainly by the intrinsic stress-induced uniaxial anisotropy. Faraday rotation at 800 nm and Curie temperature decreased with increasing Zn content x.