EFFECT OF PREOXIDE ON THE STRUCTURE OF THERMAL OXIDE

It is found from X-ray photoelectron spectroscopy study on the chemica l structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainl y on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is f ormed in dry oxygen at 300 degrees C, modifies the structure of oxide near the surface.