HG-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION APPLICATION TO HYDROGENATED AMORPHOUS-SILICON PHOTOCONVERSION LAYER OVERLAID ON CHARGE-COUPLED-DEVICE

Authors
NOZAKI H SAKUMA N NIIYAMA T IHARA H ISHIZUKA Y ICHINOSE H IIDA Y SASAKI M MANABE S
Citation
H. Nozaki et al., HG-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION APPLICATION TO HYDROGENATED AMORPHOUS-SILICON PHOTOCONVERSION LAYER OVERLAID ON CHARGE-COUPLED-DEVICE, JPN J A P 1, 34(5A), 1995, pp. 2223-2228
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
5A
Year of publication
1995
Pages
2223 - 2228
Database
ISI
SICI code
Abstract
An Hg-sensitized photochemical vapor deposition method has been develo ped which has enabled a hydrogenated amorphous silicon photoconversion layer to be overlaid on a charge coupled device (CCD) imager, without a pixel separation structure. This chemical vapor deposition (CVD) me thod has been used to realize imaging devices with high sensitivity an d high resolution for high-definition TV.