USE OF TETRAETHYLGERMANE IN ARF EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS SILICON-GERMANIUM FILMS

A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C2H5)(4)) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si1-xGex:H,C). T he germanium composition, x, could easily be controlled since it almos t coincided with the gas-phase composition. The optical band gap (E(op t)) of the film was reduced from 1.8 eV (x=0) to 1.4 eV (x=0.8). This relatively wide E(opt) compared with conventional hydrogenated or fluo rinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH2 and GeH2 bonds in the film.