IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHEDSILICON SUBSTRATES

Thin oxides thermally grown in reactive-ion-etched (RIE) silicon subst rates in N2O and diluted O-2 ambient have been studied. The microrough ness of the oxide-silicon interface was investigated using a spectroph otometer, atomic force microscopy (AFM), and cross-sectional high-reso lution electron microscopy (HRTEM). The microroughness is strongly dep endent on the RIE conditions and the post etching treatments. Furtherm ore, oxidation-enhanced interface microroughness has been observed. As compared with the pure oxides grown in diluted oxygen, N2O-grown oxid es exhibit stronger immunity to RIE-induced damage. N2O oxidation of t he etched specimens treated with an after-treatment-chamber (ATC) proc ess result in the best electrical properties.