FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O

The properties of the oxide films grown by pure N2O were studied in th is work. A two-layer model, considering a N2O oxide with an oxy-nitrid e film at the interface, was used to describe the dependence of the ma in peak shift in a Fourier transform infrared (FTIR) spectrum on N2O t hicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consiste nt results and the thickness of this layer is found to be 14-16 Angstr om.