STRUCTURE AND DIELECTRIC-PROPERTIES OF SRTIO3 FILMS PREPARED BY PULSED-LASER DEPOSITION TECHNIQUE

Authors
Citation
Mh. Yeh et al., STRUCTURE AND DIELECTRIC-PROPERTIES OF SRTIO3 FILMS PREPARED BY PULSED-LASER DEPOSITION TECHNIQUE, JPN J A P 1, 34(5A), 1995, pp. 2447-2452
Citations number
13
Categorie Soggetti
Physics, Applied
Volume
34
Issue
5A
Year of publication
1995
Pages
2447 - 2452
Database
ISI
SICI code
Abstract
Strontium titanate thin films have been prepared on Pt-coated and p-ty pe bare Si(100) substrates by a pulsed laser deposition technique. Bot h the substrate temperature and the oxygen pressure substantially affe cted the crystal structure, microstructure and texture characteristics of the SrTiO3 films. The (110)-textured films were obtained at 650 de grees C under oxygen pressure of 1 mbar. The apparent dielectric const ants increased with the thickness of the films and was accounted for b y the formation of the low-dielectric-constant interacting layer, whic h was connected with the SrTiO3 films in series. The true dielectric c onstant of the (110)-textured SrTiO3 films was estimated to be K-STO = 239 (100 kHz).