TRAP CENTERS IN GERMANIUM-IMPLANTED AND IN AS-GROWN 6H-SIC

We have investigated the trap centers in germanium (Ge)-ion-implanted SiC(6H-SiC:Ge) and in as-grown SiC(AG:6H-SiC) samples using photolumin escence (PL) and deep-level transient spectroscopy (DLTS). Three carbo n-vacancy related luminescence peaks were observed in 6H-SiC:Ge in PL measurements. Six electron trap centers were observed both in 6H-SiC:G e and in AG:6H-SiC by DLTS. These trap-center-related peaks disappeare d from both 6H-SiC:Ge and AG:6H-SiC after surface oxidation and subseq uent removal of the oxide layers. Germanium atoms related to donor-typ e deep level at 1.2 eV below the conduction band edge is observed in 6 H-SiC:Ge by DLTS. The six common trap centers are related to native de fects. The deep-level activation energy, concentration and capture cro ss section are estimated.