CURRENT-PATH OBSERVATION IN LOW-DOSE SIMOX (SEPARATION BY IMPLANTED OXYGEN) BURIED-SIO2 LAYER

Current paths in the buried-SiO2 layer of low-dose SIMOX (Separation b y IMplanted OXygen) wafers are observed directly by micro-beam techniq ues both in plan and sectional views based on Cu-plated indications. L arge-area current paths display particle traces on the surface-Si laye r immediately above the current path. Higher annealing temperatures (g reater than or equal to 1330 degrees C) decrease micro-roughness along the buried-SiO2 front/back boundaries and reduce current-path density .