NOVEL AMORPHOUS-SILICON-BASED DOUBLE-METAL ANTIFUSE WITH BARRIER ENHANCEMENT LAYER

The electrical characteristics, operating mechanism and reliability of a novel amorphous-silicon-based double-metal antifuse are reported in detail. A very thin alpha-SiC:H layer was inserted on both top and bo ttom Al/alpha-Si:H interfaces as barrier enhancement layer. With prope r adjustment of the thickness of this layer, the programming voltage a nd leakage current can be controlled. The antifuse offers very low on- resistance (<2 Omega) and low preparation temperature (<250 degrees C) , and the characteristics are independent of area, therefore. The devi ce is suitable for integration with field-programmable gate array appl ications.