EFFECTS OF DIFFERENT CATION AND ANION INTERDIFFUSION RATES IN DISORDERED IN0.53GA0.47AS INP SINGLE QUANTUM-WELLS/

The effects of different cation and anion interdiffusion rates when di sordering In0.53Ga0.47As/InP single quantum wells are investigated usi ng an error function distribution to model the compositional profile a fter interdiffusion. The early stages of disordering result in a spati ally dependent strain buildup, which can be either compressive or tens ile. The effects of this strain profile and the compositional distribu tion give rise to interesting carrier confinement profiles after disor dering. A significantly faster cation interdiffusion rate produces a r ed shift of the ground-state transition energy, which with prolonged i nterdiffusion saturates and then decreases. A significantly higher ani on interdiffusion rate causes a blue shift in the ground state transit ion energy, and shifts the Light hole ground state above the heavy hol e ground state. The results from the model are compared with reported experimental results which have been interpreted in terms of different interdiffusion rates on the two sublattices.