STRUCTURE EFFECT ON ELECTRICAL-PROPERTIES OF ITO FILMS PREPARED BY RFREACTIVE MAGNETRON SPUTTERING

ITO films have been deposited onto glass substrates by rf reactive mag netron sputtering using an InSn (90-10) alloy target. After the deposi tion, the films were annealed in air at 500 degrees C for 30, 60, 90 a nd 180 min respectively. The film structure varies as the annealing ti me is changed. The films electrical properties show a strong dependenc e on the film structure. Although all the films show a preferred orien tation along the (400) direction, the film which has a high (222) diff raction peak intensity has a high carrier mobility and a low resistivi ty.