DEPENDENCE OF PHOTOLUMINESCENCE OF POROUS SILICON ON ANGLE OF RADIATION

Authors
KIMURA T NISHIDA H TERUI S SUZUKI T
Citation
T. Kimura et al., DEPENDENCE OF PHOTOLUMINESCENCE OF POROUS SILICON ON ANGLE OF RADIATION, JPN J A P 1, 34(4A), 1995, pp. 1895-1896
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
4A
Year of publication
1995
Pages
1895 - 1896
Database
ISI
SICI code
Abstract
Brightness of UV-excited porous silicon has been measured as a functio n of angle of radiation. It is revealed that the variation of brightne ss of porous silicon with angle of radiation completely violates Lambe rt's law of cosine. The origin of this property is discussed in relati on to surface morphology.