OPTICAL-PROPERTIES AND STRUCTURE OF SIO2-FILMS PREPARED BY ION-BEAM SPUTTERING

SiO2 films were prepared by an ion-beam sputtering (IBS) method and th eir properties were studied using visible-UV absorption spectroscopy, X-ray photoelectron spectroscopy (XPS) and IR transmission spectroscop y, The SiO2 films prepared with O-2 atmosphere had good transparency i n the visible region. Only the XPS signal due to the Si-O-2 bond was o bserved, and the film composition was almost stoichiometric. However, the full widths at half maximum of the XPS peak and each IR band of th e SiO2 films were larger than those of thermally oxidized SiO2 films. This suggests that the SiO2 films prepared by the IBS were more disord ered than the thermally oxidized SiO2 films. The IR spectra showed tha t the structure of the SiO2 films prepared by the IBs method was mainl y coesite like and was different from that of the thermally oxidized S iO2 which was mainly quartz like.