HIGH-ENERGY HEAVY-ION-INDUCED CHANGES IN THE PHOTOLUMINESCENCE AND CHEMICAL-COMPOSITION OF POROUS SILICON

Anodically etched porous silicon samples have been irradiated with 85 MeV Ni ions. The ion irradiation results in a complete suppression of the major photoluminescence peak at 697 nm and the shoulder peak at 6. 7 nm. In the ion-irradiated sample, the weak Pl peak, appears at 588 n m. Elastic recoil detection analysis has been used to study the change s in the hydrogen concentration profiles during ion irradiation. Infra red spectroscopy has been employed to investigate the effect of ion ir radiation on the chemical species present in the porous silicon. The c hanges in the photoluminescence spectra have been correlated with the resulting changes in the concentration of hydrogen and chemical comple xes containing Si, H and O in the porous silicon sample on irradiation .