NOVEL OXYGEN-FREE TITANIUM SILICIDATION (OFS) PROCESSING FOR LOW-RESISTANCE AND THERMALLY STABLE SALICIDE (SELF-ALIGNED SILICIDE) IN DEEP-SUBMICRON DUAL-GATE CMOS (COMPLEMENTARY METAL-OXIDE SEMICONDUCTORS)

A low resistance and thermally stable TiSi2 self aligned silicide (SAL ICIDE) for deep submicron p(+) and n(+) dual gate complementary metal- oxide semiconductors (CMOS) has been developed. This was achieved thro ugh the use of a novel oxygen free silicidation (OFS) process using a reaction between a titanium included nitrogen (TixNy) and an oxygen fr ee poly-Si-gate. The oxygen free poly-Si was realized using low pressu re chemical vapor deposition (LPCVD) system with nitrogen flow Load-Lo ck chamber. The OFS TiSi2 film did not agglomerate after the treatment of the RTA at 1050 degrees C for 20 s in a N-2 atmosphere and the add itional furnace annealing at 900 degrees C for 30 min. in a N-2 atmosp here. For both n(+) and p(+) gates, low sheet resistances (about 2.8 O mega/square.) were achieved under the 0.2 mu m size.