REDUCING REVERSE-BIAS CURRENT IN 450-DEGREES-C-ANNEALED N(+)P JUNCTION BY HYDROGEN RADICAL SINTERING

Ultra-shallow n(+)p junctions featuring very low reverse-bias current densities (3.1 x 10(-9) A . cm(-2) at 5 V) have been successfully form ed at a post-implantation annealing temperature as low as 450 degrees C. Such a low reverse-bias current level has been achieved by eliminat ing residual point defects remaining after 450 degrees C post-implanta tion annealing. A newly developed hydrogen radical sintering (H sinte ring) is presented as a promising method to eliminate these defects an d thus improve the characteristics of junctions formed by low-temperat ure post-implantation annealing.