Mm. Oka et al., REDUCING REVERSE-BIAS CURRENT IN 450-DEGREES-C-ANNEALED N(+)P JUNCTION BY HYDROGEN RADICAL SINTERING, JPN J A P 1, 34(2B), 1995, pp. 796-799
Ultra-shallow n(+)p junctions featuring very low reverse-bias current
densities (3.1 x 10(-9) A . cm(-2) at 5 V) have been successfully form
ed at a post-implantation annealing temperature as low as 450 degrees
C. Such a low reverse-bias current level has been achieved by eliminat
ing residual point defects remaining after 450 degrees C post-implanta
tion annealing. A newly developed hydrogen radical sintering (H sinte
ring) is presented as a promising method to eliminate these defects an
d thus improve the characteristics of junctions formed by low-temperat
ure post-implantation annealing.