SWITCHING CHARACTERISTICS OF A THIN-FILM SOI POWER MOSFET

This paper describes switching characteristics of a thin-film silicon- on-insulator (SOI) power metal-oxide-semiconductor field-effect transi stors (MOSFETs) based on the results of numerically simulating thin-fi lm SOI power MOSFETs lathe 50-V class. The dependence of the rise time and fall time on the doping concentration of the substrate, on the do ping type of the substrate, and on the thickness of the buried oxide l ayer are studied. In addition, the optimum device structure of the thi n-film SOI power MOSFET for high-frequency switching application is al so described.