AN INVESTIGATION ON THE SHORT-CHANNEL EFFECT FOR O.1-MU-M FULLY DEPLETED SOIMOSFET USING EQUIVALENT ONE-DIMENSIONAL MODEL

An analytical model for the short channel effect for the silicon on in sulator metal oxide semiconductor field effect transistor (SOIMOSFET) is proposed. The two dimensional potential problem is reduced to a one dimensional problem, using a virtual electrode which is equivalent to the drain and the source electrodes. The behavior for the short chann el effect is also discussed using this model.