A TRENCH-GATE SILICON-ON-INSULATOR LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH THE P(+) CATHODE WELL

A trench-gate silicon-on-insulator (SOI) lateral insulated gate bipola r transistor (LIGBT) with the p(+) cathode well is proposed to improve the latch-up characteristics, and the improved characteristics are ve rified numerically by MEDICI simulation. It is found that the trench-g ate SOI LIGBT exhibits at least 6 times larger latch-up capability tha n the conventional devices. The enhanced latch-up capability of the tr ench-gate SOI LIGBT is obtained due to the fact that the hole current in the device bypasses the resistance of the p body region which is th e source of the latch-up and reaches the cathode via the p(+) cathode well.