Bh. Lee et al., A TRENCH-GATE SILICON-ON-INSULATOR LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH THE P(+) CATHODE WELL, JPN J A P 1, 34(2B), 1995, pp. 854-859
A trench-gate silicon-on-insulator (SOI) lateral insulated gate bipola
r transistor (LIGBT) with the p(+) cathode well is proposed to improve
the latch-up characteristics, and the improved characteristics are ve
rified numerically by MEDICI simulation. It is found that the trench-g
ate SOI LIGBT exhibits at least 6 times larger latch-up capability tha
n the conventional devices. The enhanced latch-up capability of the tr
ench-gate SOI LIGBT is obtained due to the fact that the hole current
in the device bypasses the resistance of the p body region which is th
e source of the latch-up and reaches the cathode via the p(+) cathode
well.