NEW P-MOSFET HOT-CARRIER DEGRADATION MODEL FOR BIDIRECTIONAL OPERATION

It has been recognized that the building in reliability for hot-carrie r is important in submicrometer p-MOSFET's as well as n-MOSFET's for u se in the design of ULSI's. Therefore in this paper, we introduce a ne w hot-carrier degradation model of p-MOSFET's for bi-directional opera tion, aiming at constructing a new reliability simulator to cope with various operation modes. This model is based on the trap-induced barri er lowering (TIBL), the channel length modulation (CLM) due to electro n traps in the oxide, and the mobility modulation (MM) due to interfac e state generation. By extracting these physically related parameters from transistor characteristics after hot-carrier injection in additio n to extracting transistor model parameters before the injection, the hot-carrier degradation can be predicted not only in the linear and sa turation regions but also in the forward and reverse operation modes.