LOW-LOSS SCHOTTKY RECTIFIER UTILIZING TRENCH SIDEWALL AS JUNCTION-BARRIER-CONTROLLED SCHOTTKY CONTACT

A novel junction barrier contolled Schottky(JBS) rectifier structure, which has increased the Schottky contact area by utilizing the trench sidewall, has been proposed. The proposed device consists of a JBS rec tifier positioned vertically along the trench sidewall as well as late rally along the surface. The additional sidewall Schottky contact redu ces the forward voltage drop by enlarging the Schottky active area. Th e new trench structure shifts the peak electric field from Schottky co ntact surface to the silicon bulk and the leakage current by the barri er height lowering effect is decreased. An intensive 2-dimensional num erical simulation by MEDICI shows that the leakage current of the tren ched JBS rectifier is less than 60% of that of the conventional Schott ky rectifier, while the forward voltage drop of the trenched JBS recti fier is almost the same as that of the conventional Schottky rectifier .