Hs. Kim et al., LOW-LOSS SCHOTTKY RECTIFIER UTILIZING TRENCH SIDEWALL AS JUNCTION-BARRIER-CONTROLLED SCHOTTKY CONTACT, JPN J A P 1, 34(2B), 1995, pp. 913-916
A novel junction barrier contolled Schottky(JBS) rectifier structure,
which has increased the Schottky contact area by utilizing the trench
sidewall, has been proposed. The proposed device consists of a JBS rec
tifier positioned vertically along the trench sidewall as well as late
rally along the surface. The additional sidewall Schottky contact redu
ces the forward voltage drop by enlarging the Schottky active area. Th
e new trench structure shifts the peak electric field from Schottky co
ntact surface to the silicon bulk and the leakage current by the barri
er height lowering effect is decreased. An intensive 2-dimensional num
erical simulation by MEDICI shows that the leakage current of the tren
ched JBS rectifier is less than 60% of that of the conventional Schott
ky rectifier, while the forward voltage drop of the trenched JBS recti
fier is almost the same as that of the conventional Schottky rectifier
.