VERY-LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SI FILMS FABRICATED BY HYDROGEN DILUTION WITH ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

Characteristics of polycrystalline silicon films deposited both on SiO 2 and Coming 7059 glass substrates are presented in this paper. The si licon films were deposited by a hydrogen dilution method using electro n cyclotron resonance chemical vapor deposition at 250 degrees C witho ut any thermal or laser annealing. The hydrogen dilution ratio was bet ween 90% and 99%. The geometric configuration and surface morphology o f polycrystalline silicon films were studied by atomic force microscop y. The largest grain size of the deposited silicon films; identified b y plan-view transmission electron microscopy dark-field imaging, was a bout 1 mu m. From Raman spectrum, the crystalline fraction of polycrys talline silicon films was identified to be nearly 100%. The polycrysta lline silicon was found to be preferentially [111]- and [110]-oriented , from the X-ray diffraction pattern.