Small grain poly-Si has defects of the order of 10(18) to 10(19) spins
/cm(3). Hydrogen is generally used to terminate these defects, which i
s introduced from a hydrogen plasma. Damage caused by UV emitted from
the plasma glow discharge was identified as one of the causes limiting
the quality of the bottom gate thin him transistor (TFT) devices. The
effect of UV on the TFT transfer characteristics was studied. ESR was
used to measure the change in the poly-Si dangling bond density as a
result of UV irradiation. It was confirmed that plasma UV creates dama
ge in the poly-Si. A combination of plasma hydrogenation and SiNx:H pa
ssivation and thermal annealing was found to be particularly effective
in reducing the defect density by reconstruction of dangling bonds an
d redistribution of hydrogen without hydrogen loss. The excellent char
acteristics obtained using this hydrogenation method are presented.