HIGHLY RELIABLE SILICON-NITRIDE THIN-FILMS MADE BY JET VAPOR-DEPOSITION

This paper reports our results on the properties of gate-quality silic on nitride thin films produced by the jet vapor deposition (JVD) techn ique at room temperature. It will be shown that the electrical propert ies and reliability of the metal-nitride-silicon (MNS) capacitors, in terms of their densities of interface traps, leakage current, and resi stance against hot-carrier or radiation damage, are significantly bett er than similar devices made by any other deposited nitrides previousl y reported.