CHARACTERIZATION OF ULTRATHIN DIELECTRICS GROWN BY MICROWAVE AFTERGLOW OXYGEN AND N2O PLASMA

Ultrathin dielectrics, oxides and oxynitrides were grown using microwa ve afterglow oxygen and N2O plasma at low temperature. N2O plasma anne aling and pretreatment improved the breakdown properties of O-2 plasma oxides. From secondary ion mass spectroscopy (SIMS) analysis, nitroge n was found to be incorporated into oxides effectively by this low-tem perature method. Nitrogen content was highest at the oxide surface and decreased toward the oxide/Si interface. This indicates a nitridation mechanism different from the conventional N2O gas annealing or oxidat ion processes. The relationships among interface state densities, tunn eling current and nitrogen profiles were also investigated by C-V and I-V measurements.