DEPLETION CHARACTERISTICS OF DIRECT SCHOTTKY CONTACTS TO QUANTUM-WELLS FORMED BY IN-SITU SELECTIVE ELECTROCHEMICAL PROCESS

Depletion properties of direct Schottky/quantum well (QW) contacts for med by the in situ, selective electrochemical chemical process were sy stematically characterized by the C-V and electron-beam-induced curren t (EBIC) techniques. The EBIC images clearly showed that the barrier e xists at the edge of the QW layer. It was found that the capacitance o f the Schottky/QW contact depends linearly on In {1/(V-bi - V)}, where the V-bi is built-in voltage, and that the depletion width obtained f rom the EBIC signal is proportional to the applied voltage. These resu lts demonstrate that well-behaved depletion characteristics of the Sch ottky/QW systems can be realized.