Yh. Jeong et al., EFFECTS OF SULFIDE PASSIVATION ON THE PERFORMANCE OF GAAS MISFETS WITH PHOTO-CVD GROWN P3N5 GATE INSULATORS, JPN J A P 1, 34(2B), 1995, pp. 1176-1180
Accumulation-mode and depletion-mode GaAs metal-insulator-semiconducto
r field-effect transistors (MISEETs), with sulfur-treatment and a phot
ochemical vapor-deposited-P3N5 gate insulator, have been successfully
fabricated. The devices have good linearity, low hysteresis in current
-voltage characteristics, and the instability of the current less than
22 percent for the period of 1.0-1.0 x 10(4) s. The effective electro
n mobility and extrinsic transconductance of the FETs at room temperat
ure are about 1300 cm(2)/V . s and 1.41 mS/mm for the accumulation-mod
e, and about 4500 cm(2)/V . s and 4 mS/mm for the depletion-mode, resp
ectively. Capacitance-voltage (C-V) characteristics and Anger electron
spectroscopy (AES) analysis for different sulfur-treatment conditions
are discussed. The atomic concentration ratios of sulfur and oxygen t
o arsenide oil GaAs surfaces and GaAs metal-insulator-semiconductor (M
IS) interface properties are critically dependent on sulfur pretreatme
ent conditions, and the optimum sulfur-treatment temperature is determ
ined to be about 40 degrees C. The minimum density of interface trap s
tates for an Al/P3N5/GaAs MIS diode with the optimized surface treatme
nt is about 4.3 x 10(10) cm(-2) eV(-1).