K. Nishihori et al., BURIED-CHANNEL WNX W SELF-ALIGNED GAAS-MESFET PROCESS WITH SELECTIVELY IMPLANTED CHANNEL AND UNDOPED EPITAXIAL SURFACE-LAYERS FOR MMIC APPLICATIONS/, JPN J A P 1, 34(2B), 1995, pp. 1241-1245
The combined process of epitaxy and ion implantation has been develope
d in the fabrication of a buried-channel WNx/W self-aligned GaAs metal
-semiconductor field-effect transistor (MESFET). This MESFET comprises
an ion-implanted channel and an undoped GaAs epitaxial surface layer.
The ion-implantation technique leads to an IC-oriented process and th
e epitaxial technique to a buried channel structure. Both ease of isol
ation and enhanced breakdown voltage were attained, promising monolith
ic microwave integrated circuits (MMICs) for L-band digital mobile com
munication systems.