650 NM ALGAINP VISIBLE-LIGHT LASER-DIODE WITH DRY-ETCHED MESA STRIPE

CW operation of 650 nm GaInP/AlGaInP index waveguide-type visible-ligh t laser diodes (LDs) with dry-etched mesa stripes fabricated by Cl-2 r eactive ion beam etching was achieved for the first time. Its threshol d current of 47 mA and slope efficiency of 0.40 W/A are almost the sam e as those of wet-etched LDs fabricated from the same wafer (L 500 mu m). Cross-sectional scanning electron microscopy image of the buried m esa stripe shows that dry-etched LD has a symmetric mesa shape, promis ing a small focusing spot-size and a stable mode operation, whereas th e wet-etched mesa is asymmetric because of the use of a 6 degrees-miso riented substrate for this wavelength operation. The aging test operat ed with a light output power of 3 mW at 50 degrees C reveals that thes e LDs have an operating time of over 3000 h, indicating they have suff icient lifetime for conventional uses.