CW operation of 650 nm GaInP/AlGaInP index waveguide-type visible-ligh
t laser diodes (LDs) with dry-etched mesa stripes fabricated by Cl-2 r
eactive ion beam etching was achieved for the first time. Its threshol
d current of 47 mA and slope efficiency of 0.40 W/A are almost the sam
e as those of wet-etched LDs fabricated from the same wafer (L 500 mu
m). Cross-sectional scanning electron microscopy image of the buried m
esa stripe shows that dry-etched LD has a symmetric mesa shape, promis
ing a small focusing spot-size and a stable mode operation, whereas th
e wet-etched mesa is asymmetric because of the use of a 6 degrees-miso
riented substrate for this wavelength operation. The aging test operat
ed with a light output power of 3 mW at 50 degrees C reveals that thes
e LDs have an operating time of over 3000 h, indicating they have suff
icient lifetime for conventional uses.