NOVEL WIRE TRANSISTOR STRUCTURE WITH INPLANE GATE USING DIRECT SCHOTTKY CONTACTS TO 2DEG

A novel wire transistor structure with Schottky in-plane gates (IPG) t o the AlGaAs/GaAs quantum well (QW) has been successfully fabricated a nd characterized. An in situ selective electrochemical process is util ized to form direct Schottky contacts to the edge of the QW. Details o f the novel process for transistor fabrication, as well as field-effec t characteristics of the novel device, are resented and discussed. Fie ld-effect transistor (FET) characteristics with excellent gate control and clear pinch-off are obtained at room temperature and they are com pared with a theory newly developed for the IPG FET.