APPLICATION OF STM NANOMETER-SIRE OXIDATION PROCESS TO PLANAR-TYPE MIM DIODE

Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiO2/Si substrate u sing the scanning tunneling microscope [STM] tip as-a selective anodiz ation electrode. The dependence of the size of the oxidized titanium l ine on the various parameters is investigated. The formed oxidized tit anium line has resistivity of 2 x 10(4) ohm cm, which is a value seven orders of magnitude higher than that of the deposited Ti layer. The o xidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy ba rrier height of the oxidized Ti line is found to be delta E(g) = 0.25 eV.