SUPERCONDUCTING 3-TERMIMAL DEVICES USING AN INAS-BASED 2-DIMENSIONAL ELECTRON-GAS

A newly fabricated three-terminal Josephson junction is coupled with a n InAs-inserted-channel InAlAs/InGaAs heterostructure. The two-dimensi onal electron gas (2DEG) confined in the inserted InAs layer has a hig h mobility of 73890 cm(2)/V . s and a high sheet-carrier density of 1. 98 x 10(12) cm(-2) at 4.2 K. The supercurrent flows through the 2DEG a nd can be controlled by gate voltage. The critical current and the nor mal resistance as a function of gate voltage are measured and the shee t-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the supercon ducting proximity effect theory and by the normal transport of the 2DE G.