CHARACTERIZATION AND ELECTRICAL PROPERTY OF MOLTEN-GROWN CUTCNQ FILM MATERIAL

Citation
Sg. Liu et al., CHARACTERIZATION AND ELECTRICAL PROPERTY OF MOLTEN-GROWN CUTCNQ FILM MATERIAL, Thin solid films, 289(1-2), 1996, pp. 300-305
Citations number
39
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
289
Issue
1-2
Year of publication
1996
Pages
300 - 305
Database
ISI
SICI code
0040-6090(1996)289:1-2<300:CAEPOM>2.0.ZU;2-W
Abstract
Metallic copper foil directly reacted with molten TCNQ (7,7,8,8-tetrac yano-p-quinodimethane) under nitrogen atmosphere resulted in a CuTCNQ semiconducting film with electrical switching and memory properties. T he material was characterised by Raman and UV-Vis spectral analyses as well as current-voltage characteristic measurement. The degree of cha rge transfer from copper to TCNQ and the electrical memory switching p roperty are discussed. The spectral analyses, degree of charge transfe r and electrical property are compared with those of both metathetical ly synthesised pure CuTCNQ powder and a solution-grown film material.