N. Hirashita et al., REACTION STUDIES BETWEEN FLUOROCARBON FILMS AND SI USING TEMPERATURE-PROGRAMMED X-RAY PHOTOELECTRON AND DESORPTION SPECTROSCOPIES, JPN J A P 1, 34(4B), 1995, pp. 2137-2141
Surface structure of plasma-polymerized fluorocarbon thin film on Si a
nd gas desorption were concurrently studied as a function of temperatu
re between 20 and 700 degrees C using temperature-programmed X-ray pho
toelectron spectroscopy with a residual gas analyzer. The films, consi
sting of CF3, CF2, CF and C-CFx bonds, with the F/C ratio of 1.7 were
found to be stable up to 200 degrees C and to thermally decompose abov
e 200 degrees C. SiF4 desorption, following gradual pyrolysis with dec
rease in CF3, CF2 and CF bonds due to desorption of fluorocarbon gases
, was observed for F/C ratios ranging from 1 to 0.1. The pyrolytic pro
cess of the film and the thermal reaction with Si substrates were furt
her discussed based on results of additional desorption and ion-induce
d reaction experiments.