NEW SI-H INFRARED-ABSORPTION PEAK CORRESPONDING TO THE HYDROGEN-DEFECT SHALLOW DONORS IN SILICON

Authors
MENG XT XIONG JW QIN GG DU YC
Citation
Xt. Meng et al., NEW SI-H INFRARED-ABSORPTION PEAK CORRESPONDING TO THE HYDROGEN-DEFECT SHALLOW DONORS IN SILICON, Physica scripta. T, 52(1), 1995, pp. 108-112
Citations number
21
Categorie Soggetti
Physics
Journal title
Physica scripta. T → ACNP
ISSN journal
02811847
Volume
52
Issue
1
Year of publication
1995
Pages
108 - 112
Database
ISI
SICI code
0281-1847(1995)52:1<108:NSIPCT>2.0.ZU;2-A
Abstract
A new Si-H infrared absorption peak at 2016 cm(-1) is found to be rela ted to the hydrogen-defect shallow donors apart from the 2162cm(-1) pe ak, indicating that the shallow donors do not correspond to only one k ind of defect structure. The micro-structure of the complexes causing the Si-H IR peaks and hydrogen-defect shallow donors is discussed.