INVESTIGATIONS ON TELLURIUM DOPED CDTE-FILMS DEPOSITED BY ELECTRON-BEAM EVAPORATION

Citation
C. Sravani et al., INVESTIGATIONS ON TELLURIUM DOPED CDTE-FILMS DEPOSITED BY ELECTRON-BEAM EVAPORATION, Physica scripta. T, 52(1), 1995, pp. 126-128
Citations number
16
Categorie Soggetti
Physics
Journal title
ISSN journal
02811847
Volume
52
Issue
1
Year of publication
1995
Pages
126 - 128
Database
ISI
SICI code
0281-1847(1995)52:1<126:IOTDCD>2.0.ZU;2-M
Abstract
Polycrystalline thin films of stoichiometric CdTe and Te doped high co nductivity p-CdTe films have been prepared by an electron beam evapora tion technique. The CdTe source material was doped with different Te w t.% and used as the starting material for preparation of p-CdTe films. The effect of Te concentration on structural electrical and optical p roperties of the CdTe films were studied.