ELECTRONIC-STRUCTURE OF SHALLOW DONOR PAI RS IN MANY-VALLEY SEMICONDUCTOR

Authors
Citation
Lf. Makarenko, ELECTRONIC-STRUCTURE OF SHALLOW DONOR PAI RS IN MANY-VALLEY SEMICONDUCTOR, Doklady Akademii nauk BSSR, 39(1), 1995, pp. 44-47
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
Journal title
ISSN journal
0002354X
Volume
39
Issue
1
Year of publication
1995
Pages
44 - 47
Database
ISI
SICI code
0002-354X(1995)39:1<44:EOSDPR>2.0.ZU;2-W
Abstract
The ground state energy of a shallow donor pair in semiconductor with anisotropic effective mass is calculated in the framework of the effec tive mass theory. The energy is found to be minimal if the axis of the pair is orthogonal to the direction corresponding to the greatest val ue of the effective mass. It is concluded that the electronic structur e of donor molecule in a many-valley semiconductor depends on the mole cule orientation with respect to the crystallgraphic directions.