D- CENTERS IN LOW DIMENSIONS - THE STRONG-CONFINEMENT APPROACH

Authors
BUSSER C PROETTO CR
Citation
C. Busser et Cr. Proetto, D- CENTERS IN LOW DIMENSIONS - THE STRONG-CONFINEMENT APPROACH, Journal of physics. Condensed matter, 8(10), 1996, pp. 131-138
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
8
Issue
10
Year of publication
1996
Pages
131 - 138
Database
ISI
SICI code
0953-8984(1996)8:10<131:DCILD->2.0.ZU;2-O
Abstract
Negatively charged centres (D-) formed in semiconductors by attaching a second electron to a shallow neutral hydrogenic donor (D-0) have bee n analysed in the quasi-zero- and quasi-one-dimensional limits. On the basis of the present and already known results for higher dimensions, it is proposed that D- ions support one and only one stable configura tion which evolves continuously from the three-dimensional to the zero -dimensional limit.