A hybrid, optoelectronic sampling circuit based on a photoconductive s
witch and a junction-field-effect-transistor (JFET) source follower/am
plifier has been demonstrated to have picosecond response, high-sensit
ivity, absolute-voltage capability, and a very high impedance. The dis
tributed capacitance of the electrical measurement system is reduced t
o the gate input capacitance of the JFET, and the conventional photoco
nductive current measurement is transferred into an absolute voltage m
easurement. Gating measurements with an improvement of 150 times in ou
tput voltage over unamplified photoconductive gates have been made usi
ng only 10 mu W of average optical power. The effective on-state resis
tance of the photogate has also been increased by more than 150 times,
indicating that a photoconductive probe with very low invasiveness ma
y be produced. (C) 1996 American Institute of Physics.